Datasheet > KTC2026_15

KTC2026_15

更新时间： 2024-11-19 01:14:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1027K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KTC2026_15 数据手册

DIP Type

Transistors

NPN Transistors

KTC2026

Unit: mm

TO-220F

±0.20

2.54

8^±0

■ Features

±0.20

0.70

φ3.

● Low saturation voltage

● Complementary to KTA1046

±0.20

2.76

1.47max

±0.20

0.50

±0.20

0.80

1. Base

2. Collector

3. Emitter

2.54typ

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

Collector Current - Continuous

Base Current

0.5

Collector Power Dissipation

Ta= 25℃

Tc= 25℃

℃

150

Junction Temperature

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100uA， I

Ic= 50 mA，I

= 100uA， I

CB= 60 V , I

EB= 7V , I =0

= 0

CBO

EBO

0.1

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=2 A, I

=200mA

=2 A, I

1.2

CE= 5V, I

=500mA

DC current gain

100

300

Turn On Time

Storage Time

Fall Time

0.65

1.3

stg

0.65

Collector output capacitance

Transition frequency

CB= 10V, I

= 0,f=1MHz

CE= 5V, I = 500mA

MHz

■ Classification of hfe

Type

KTC2026-Y

KTC2026-G

150-300

Range

100-200

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