Datasheet > KTC2016-Y

KTC2016-Y

更新时间： 2024-11-19 01:14:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	937K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KTC2016-Y 数据手册

SMD Type

Transistors

NPN Transistors

KTC2016

TO-220

4.50

1.30

± 0.20

9.90

(8.70)

ø3.60 0.10

0.20

+0.10

–0.05

■ Features

● Low Collector Emitter Saturation Voltage.

● Complementary to KTA1036

1.27

0.10

1.52

0.80

0.10

+0.10

–0.05

0.50

2.40

± 0.20

2.54TYP

[2.54 0.20 ]

2.54TYP

[2.54 0.20 ]

1. Base

2. Collector

3. Emitter

10.00

± 0.20

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Base Current

Symbol

Rating

Unit

VCBO

VCEO

VEBO

0.5

Collector Power Dissipation

Ta = 25℃

Tc = 25℃

℃

Junction Temperature

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 50 mA，I =0

= 100μA， I = 0

CB= 60 V , I = 0

EB= 7V , I =0

E= 0

CBO

EBO

0.1

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=2 A, I

=200mA

=2 A, I

1.2

CE= 5V, I

= 500mA

DC current gain

100

300

Turn On Time

Storage Time

Fall Time

0.65

1.3

stg

0.65

Collector output capacitance

Transition frequency

CB= 10V, I

= 0,f=1MHz

CE= 5V, I = 500mA

MHz

■ Classification of hfe

Type

KTC2016-Y

KTC2016-G

150-300

Range

100-200

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