Datasheet > KTB2234

KTB2234

更新时间： 2024-01-14 12:10:45

品牌	Logo	应用领域
KEC		晶体开关放大器晶体管电源开关功率放大器电机驱动局域网
页数	文件大小	规格书
3页	91K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (MICRO MOTOR DRIVE, HAMMER DRIVE, POWER SWITCHING, POWER AMPLIFIER)

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KTB2234 数据手册

SEMICONDUCTOR

KTB2234

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.

POWER SWITCHING APPLICATIONS.

POWER AMPLIFIER APPLICATION.

FEATURES

ᴌHigh DC Current Gain

DIM MILLIMETERS

DEPTH:0.2

7.20 MAX

5.20 MAX

0.60 MAX

: h_FE=200(Min.) (V_CE=-2V, I_C=-1A)

ᴌLow Saturation Voltage

: V_CE(sat)=-1.5V(Max.) (I_C=-1A, I_B=-1mA)

ᴌComplementary to KTD2854.

2.50 MAX

1.15 MAX

1.27

1.70 MAX

0.55 MAX

14.00+0.50

0.35 MIN

0.75+0.10

1.25

Φ1.50

0.10 MAX

MAXIMUM RATINGS (Ta=25ᴱ)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-100

-8

UNIT

12.50+0.50

1. EMITTER

2. COLLECTOR

3. BASE

1.00

TO-92L

Peak

-2

Collector Current

I_CP

-3

I_B

Base Current

-0.5

EQUIVALENT CIRCUIT

P_C

Collector Power Dissipation

Junction Temperature

ᴱ

COLLECTOR

T_j

150

T_stg

Storage Temperature Range

-55ᴕ150

BASE

∼

−

− 4kΩ

800Ω

EMITTER

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_CB=-80V, I_E=0

-10

ỌA

I_EBO

V_EB=-8V, I_C=0

Emitter Cut-off Current

-4

V_(BR)CEO

h_FE

I_C=-10mA, I_B=0

Collector-Emitter Breakdown Voltage

DC Current Gain

-100

V_CE=-2V, I_C=-1A(Pulse)

I_C=-1A, I_B=-1mA(Pulse)

V_CE=-2V, I_C=-0.5A

V_CB=-10V, I_E=0, f=1MHz

2000

-1.5

-2.0

V_CE(sat)

V_BE(sat)

f_T

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

MHz

C_ob

Collector Output Capacitance

OUTPUT

t_on

t_stg

t_f

Turn On Time

0.4

2.0

0.4

INPUT

Switching

Storage Time

Time

ỌS

20µs

-I =I =1mA

DUTY CYCLE 1%

=-30V

Fall Time

2001. 10. 23

Revision No : 0

1/3

12 3

中文翻译

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