Datasheet > KSC2881_05

KSC2881_05

更新时间： 2024-09-15 04:21:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	427K
描述
NPN Epitaxial Silicon Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KSC2881_05 数据手册

July 2005

KSC2881

NPN Epitaxial Silicon Transistor

Power Amplifier

•

Collector-Emitter Voltage : V_CEO=120V

Current Gain Bandwidth Productor : f_T=120MHz

Collector Dissipation : P_C=1~2W in Mounted on Ceramic Board

Complement to KSA1201

Marking

2 8

P Y

8 1

W W

SOT-89

1. Base 2. Collector 3. Emitter

Weekly code

Year code

h_FEgrage

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

120

V_CEO

V_EBO

I_C

800

160

I_B

Base Current

P_C

P_C*

Collector Power Dissipation

500

1,000

T_J

Junction Temperature

Storage Temperature

150

°C

T_STG

-55 ~ 150

* Mounted on Ceramic Board (250mm²x 0.8mm)

Electrical Characteristics T_a= 25°C unless otherwise noted

Symbol

BV_CEO

BV_EBO

I_CBO

Parameter

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

I_C= 10µA, I_B= 0

120

I_E= 1mA, I_C= 0

V_CB= 120V, I_E= 0

V_BE= 5V, I_C= 0

100

240

1.0

I_EBO

Emitter Cut-off Current

h_FE

DC Current Gain

V_CE= 5V, I_C= 100mA

I_C= 500mA, I_B= 50mA

V_CE= 5V, I_C= 500mA

V_CE= 5V, I_C= 100mA

_CE(sat)

_BE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

1.0

f_T

Current Gain Bandwidth Product

Output Capacitance

120

MHz

C_ob

V_CB= 10V, I_E= 0, f = 1MHz

KSC2881 Rev. B2

www.fairchildsemi.com

12 3 4 5

中文翻译

下载PDF

与KSC2881_05相关器件

型号	品牌	获取价格	描述	数据表
KSC2881O	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89
KSC2881-O	SAMSUNG	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89
KSC2881OTF	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon,
KSC2881Y	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89
KSC2881-Y	SAMSUNG	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89
KSC2881YTF	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon,
KSC2881YTF_NL	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, LEAD F
KSC2883	FAIRCHILD	获取价格	Low Frequency Power Amplifier
KSC2883	SAMSUNG	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89,
KSC2883_06	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor