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KSC2881YTF_NL PDF预览

KSC2881YTF_NL

更新时间: 2024-11-25 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管功率放大器
页数 文件大小 规格书
4页 43K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3

KSC2881YTF_NL 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.76Is Samacsys:N
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:FLAT
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

KSC2881YTF_NL 数据手册

 浏览型号KSC2881YTF_NL的Datasheet PDF文件第2页浏览型号KSC2881YTF_NL的Datasheet PDF文件第3页浏览型号KSC2881YTF_NL的Datasheet PDF文件第4页 
KSC2881  
Power Amplifier  
Collector-Emitter Voltage : V  
=120V  
CEO  
Current Gain Bandwidth Productor : f =120MHz  
Collector Dissipation : P =1~2W in Mounted on Ceramic Board  
Complement to KSA1201  
T
C
SOT-89  
1. Base 2. Collector 3. Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
120  
120  
5
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CBO  
CEO  
EBO  
V
I
I
800  
160  
mA  
mA  
C
Base Current  
B
P
P *  
Collector Power Dissipation  
500  
1,000  
mW  
mW  
C
C
T
T
Junction Temperature  
150  
°C  
°C  
J
Storage Temperature  
-55 ~ 150  
STG  
2
* Mounted on Ceramic Board (250mm x0.8mm)  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
120  
5
Typ.  
Max.  
Units  
BV  
I =10µA, I =0  
V
V
CEO  
EBO  
C
B
BV  
I =1mA, I =0  
E C  
I
I
V
=120V, I =0  
100  
100  
240  
1.0  
nA  
nA  
CBO  
EBO  
CB  
BE  
CE  
E
Emitter Cut-off Current  
V
V
=5V, I =0  
C
h
DC Current Gain  
=5V, I =100mA  
80  
FE  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =500mA, I =50mA  
V
V
CE  
BE  
C
B
V
=5V, I =500mA  
1.0  
CE  
CE  
CB  
C
f
Current Gain Bandwidth Product  
Output Capacitance  
V
V
=5V, I =100mA  
C
120  
MHz  
pF  
T
=10V, I =0, f=1MHz  
E
30  
C
ob  
h
Classification  
FE  
Classification  
O
Y
h
80 ~ 160  
120 ~ 240  
FE  
Marking  
SCX  
h
grade  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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