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KSC2982_05 PDF预览

KSC2982_05

更新时间: 2024-09-16 04:21:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
5页 428K
描述
NPN Epitaxial Silicon Transistor

KSC2982_05 数据手册

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July 2005  
KSC2982  
NPN Epitaxial Silicon Transistor  
Strobe Flash & Medium Power Amplifier  
Excellent hFE Linearity : hFE1=140 ~ 600  
Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V  
Collector Dissipation : PC=1~2W in Mounted on Ceramic Board  
Marking  
2 9  
P Y  
8 2  
W W  
SOT-89  
1
1. Base 2. Collector 3. Emitter  
Weekly code  
Year code  
hFE grage  
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter Base Voltage  
30  
30  
10  
6
V
V
V
V
A
A
A
A
VCES  
VCEO  
VEBO  
IC  
Collector Current (DC)  
2
ICP  
Collector Current (Pulse) *  
Base Current (DC)  
4
IB  
0.4  
0.8  
IBP  
Base Current (Pulse) *  
Collector Power Dissipation  
PC  
500  
1,000  
mW  
mW  
PC*  
TJ  
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
TSTG  
-55 ~ 150  
* PW 10ms, Duty Cycle 30%  
Mounted on Ceramic Board (250mm2 x 0.8mm)  
©2005 Fairchild Semiconductor Corporation  
KSC2982 Rev. B3  
1
www.fairchildsemi.com  

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