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KSC2982B PDF预览

KSC2982B

更新时间: 2024-11-06 19:42:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
4页 63K
描述
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

KSC2982B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-89包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.88外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

KSC2982B 数据手册

 浏览型号KSC2982B的Datasheet PDF文件第2页浏览型号KSC2982B的Datasheet PDF文件第3页浏览型号KSC2982B的Datasheet PDF文件第4页 
KSC2982  
Strobe Flash & Medium Power Amplifier  
Excellent h Linearity : h =140 ~ 600  
Low Collector-Emitter Saturation Voltage : V (sat)=0.5V  
FE FE1  
CE  
Collector Dissipation : P =1~2W in Mounted on Ceramic Board  
C
SOT-89  
1. Base 2. Collector 3. Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
30  
30  
10  
6
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter Base Voltage  
V
V
V
V
A
A
A
A
CBO  
CES  
CEO  
EBO  
I
I
I
I
Collector Current (DC)  
* Collector Current (Pulse)  
Base Current (DC)  
2
C
4
CP  
B
0.4  
0.8  
* Base Current (Pulse)  
Collector Power Dissipation  
BP  
P
P *  
500  
1,000  
mW  
mW  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
J
-55 ~ 150  
STG  
* PW10ms, Duty Cycle30%  
Mounted on Ceramic Board (250mm x0.8mm)  
2
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
10  
6
Typ.  
Max.  
Units  
BV  
I =10mA, I =0  
V
V
CEO  
EBO  
C
B
BV  
I =1mA, I =0  
E C  
I
I
V
=30V, I =0  
100  
100  
600  
nA  
nA  
CBO  
EBO  
CB  
BE  
E
V
=6V, I =0  
C
h
h
DC Current Gain  
V
V
=1V, I =0.5A  
140  
70  
FE1  
FE2  
CE  
CE  
C
=1V, I =2A  
140  
0.2  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =2A, I =50mA  
0.5  
1.5  
V
V
CE  
BE  
C
B
V
=1V, I =2A  
0.86  
150  
27  
CE  
CE  
CB  
C
f
Current Gain Bandwidth Product  
Output Capacitance  
V
V
=1V, I =2A  
C
MHz  
pF  
T
=10V, I =0, f=1MHz  
E
C
ob  
h
Classification  
FE1  
Classification  
A
B
C
D
h
140 ~ 240  
200 ~ 330  
300 ~ 450  
420 ~ 600  
FE1  
Marking  
SSX  
h
grade  
FE  
©2003 Fairchild Semiconductor Corporation  
Rev. A3, February 2003  

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