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KSC2982C PDF预览

KSC2982C

更新时间: 2024-11-06 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管放大器
页数 文件大小 规格书
5页 428K
描述
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

KSC2982C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-89包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.88外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):300
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

KSC2982C 数据手册

 浏览型号KSC2982C的Datasheet PDF文件第2页浏览型号KSC2982C的Datasheet PDF文件第3页浏览型号KSC2982C的Datasheet PDF文件第4页浏览型号KSC2982C的Datasheet PDF文件第5页 
July 2005  
KSC2982  
NPN Epitaxial Silicon Transistor  
Strobe Flash & Medium Power Amplifier  
Excellent hFE Linearity : hFE1=140 ~ 600  
Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V  
Collector Dissipation : PC=1~2W in Mounted on Ceramic Board  
Marking  
2 9  
P Y  
8 2  
W W  
SOT-89  
1
1. Base 2. Collector 3. Emitter  
Weekly code  
Year code  
hFE grage  
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter Base Voltage  
30  
30  
10  
6
V
V
V
V
A
A
A
A
VCES  
VCEO  
VEBO  
IC  
Collector Current (DC)  
2
ICP  
Collector Current (Pulse) *  
Base Current (DC)  
4
IB  
0.4  
0.8  
IBP  
Base Current (Pulse) *  
Collector Power Dissipation  
PC  
500  
1,000  
mW  
mW  
PC*  
TJ  
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
TSTG  
-55 ~ 150  
* PW 10ms, Duty Cycle 30%  
Mounted on Ceramic Board (250mm2 x 0.8mm)  
©2005 Fairchild Semiconductor Corporation  
KSC2982 Rev. B3  
1
www.fairchildsemi.com  

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