Datasheet > KSC2883_06

KSC2883_06

更新时间： 2024-11-09 04:21:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	123K
描述
NPN Epitaxial Silicon Transistor

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KSC2883_06 数据手册

November 2006

KSC2883

NPN Epitaxial Silicon Transistor

Low Frequency Power Amplifier

•

3W Output Application

Collector Dissipation : P_C=1~2W in Mounted on Ceramic Board

Complement to KSA1203

Marking

2 8

P Y

8 3

W W

SOT-89

1. Base 2. Collector 3. Emitter

Weekly code

Year code

h_FEgrage

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CEO

V_EBO

I_C

1.5

0.3

I_B

Base Current

P_C

P_C*

Collector Power Dissipation

500

1,000

T_J

Junction Temperature

Storage Temperature

150

°C

T_STG

-55 ~ 150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Mounted on Ceramic Board (250mm²x0.8mm)

Electrical Characteristics * T_a= 25°C unless otherwise noted

Symbol

BV_CEO

BV_EBO

I_CBO

Parameter

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

I_C= 10µA, I_B= 0

I_E= 1mA, I_C= 0

V_CB= 30V, I_E= 0

100

320

2.0

I_EBO

Emitter Cut-off Current

V_BE= 5V, I_C= 0

h_FE

DC Current Gain

V_CE= 2V, I_C= 500mA

I_C= 1.5A, I_B= 30mA

V_CE= 2V, I_C= 500mA

V_CB= 10V, I_E= 0, f = 1MHz

100

V_CE(sat)

V_BE(on)

f_T

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

1.0

Current Gain Bandwidth Product

Output Capacitance

120

MHz

C_ob

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

KSC2883 Rev. B3

www.fairchildsemi.com

12 3 4 5

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与KSC2883_06相关器件

型号	品牌	获取价格	描述	数据表
KSC2883O	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89,
KSC2883-O	SAMSUNG	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89,
KSC2883OTF	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,
KSC2883Y	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89,
KSC2883-Y	SAMSUNG	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89,
KSC2883YTF	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,
KSC2884	SAMSUNG	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89,
KSC2982	FAIRCHILD	获取价格	Strobe Flash & Medium Power Amplifier
KSC2982	SAMSUNG	获取价格	Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3
KSC2982_05	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor