5秒后页面跳转
KSC2883_06 PDF预览

KSC2883_06

更新时间: 2024-11-06 04:21:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
5页 123K
描述
NPN Epitaxial Silicon Transistor

KSC2883_06 数据手册

 浏览型号KSC2883_06的Datasheet PDF文件第2页浏览型号KSC2883_06的Datasheet PDF文件第3页浏览型号KSC2883_06的Datasheet PDF文件第4页浏览型号KSC2883_06的Datasheet PDF文件第5页 
November 2006  
KSC2883  
tm  
NPN Epitaxial Silicon Transistor  
Low Frequency Power Amplifier  
3W Output Application  
Collector Dissipation : PC=1~2W in Mounted on Ceramic Board  
Complement to KSA1203  
Marking  
2 8  
P Y  
8 3  
W W  
SOT-89  
1. Base 2. Collector 3. Emitter  
1
Weekly code  
Year code  
hFE grage  
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
30  
30  
5
V
V
V
A
A
VCEO  
VEBO  
IC  
1.5  
0.3  
IB  
Base Current  
PC  
PC*  
Collector Power Dissipation  
500  
1,000  
mW  
mW  
TJ  
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
TSTG  
-55 ~ 150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Mounted on Ceramic Board (250mm2x0.8mm)  
Electrical Characteristics * Ta = 25°C unless otherwise noted  
Symbol  
BVCEO  
BVEBO  
ICBO  
Parameter  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
30  
Typ.  
Max.  
Units  
IC = 10µA, IB = 0  
V
V
IE = 1mA, IC = 0  
5
VCB = 30V, IE = 0  
100  
100  
320  
2.0  
nA  
nA  
IEBO  
Emitter Cut-off Current  
VBE = 5V, IC = 0  
hFE  
DC Current Gain  
VCE = 2V, IC = 500mA  
IC = 1.5A, IB = 30mA  
VCE = 2V, IC = 500mA  
VCE = 2V, IC = 500mA  
VCB = 10V, IE = 0, f = 1MHz  
100  
VCE (sat)  
VBE (on)  
fT  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
V
V
1.0  
Current Gain Bandwidth Product  
Output Capacitance  
120  
40  
MHz  
pF  
Cob  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
©2006 Fairchild Semiconductor Corporation  
KSC2883 Rev. B3  
1
www.fairchildsemi.com  

与KSC2883_06相关器件

型号 品牌 获取价格 描述 数据表
KSC2883O FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89,
KSC2883-O SAMSUNG

获取价格

Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89,
KSC2883OTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,
KSC2883Y FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89,
KSC2883-Y SAMSUNG

获取价格

Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89,
KSC2883YTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,
KSC2884 SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89,
KSC2982 FAIRCHILD

获取价格

Strobe Flash & Medium Power Amplifier
KSC2982 SAMSUNG

获取价格

Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3
KSC2982_05 FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor