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KSC2859Y PDF预览

KSC2859Y

更新时间: 2024-09-14 23:16:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器功率放大器
页数 文件大小 规格书
4页 57K
描述
Low Frequency Power Amplifier

KSC2859Y 数据手册

 浏览型号KSC2859Y的Datasheet PDF文件第2页浏览型号KSC2859Y的Datasheet PDF文件第3页浏览型号KSC2859Y的Datasheet PDF文件第4页 
KSC2859  
Low Frequency Power Amplifier  
Complement to KSA1182  
3
2
1
SOT-23  
1. Base 2. Emitter 3. Collector  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
35  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
30  
V
CEO  
EBO  
5
V
I
500  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
150  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
0.1  
Units  
I
I
V
V
=35V, I =0  
µA  
µA  
CEO  
EBO  
CB  
EB  
E
=5V, I =0  
0.1  
C
h
h
V
V
=1V, I =100mA  
70  
25  
240  
FE1  
FE2  
CE  
CE  
C
=6V, I =400mA  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =100mA, I =10mA  
0.1  
0.8  
300  
7
0.25  
1.0  
V
V
CE  
BE  
C
B
V
=1V, I =100mA  
C
CE  
CE  
CB  
f
Current Gain-Bandwidth Product  
Output Capacitance  
V
V
=6V, I =20mA  
MHz  
pF  
T
C
C
=6V, I =0, f=1MHz  
ob  
E
h
Classification  
FE1  
Classification  
O
Y
h
70 ~ 140  
120 ~ 240  
FE1  
Marking  
E1O  
h
grade  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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