Datasheet > KSC2881

KSC2881

更新时间： 2024-09-15 12:09:31

品牌	Logo	应用领域
TYSEMI		晶体晶体管放大器
页数	文件大小	规格书
1页	98K
描述
Collector-Emitter Voltage : VCEO=120V

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中文翻译

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数据手册

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KSC2881 数据手册

SSSMMMDD TTTyyyppeee

Transistor

Product specification

KSC2881

Features

Collector-Emitter Voltage : V^CEO=120V

Current Gain Bandwidth Productor : f^T=120MHz

Collector Dissipation : P^C=1 to 2W in Mounted on Ceramic Board

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

120

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

120

800

Base Current

I^B

160

P^C

500

Collector Power Dissipation

P^C*

1,000

150

Junction Temperature

T^J

Storage Temperature

T^STG

-55 to +150

* Mounted on Ceramic Board (250mm²X0.8mm)

Electrical Characteristics Ta = 25

Parameter

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Symbol

B^VCEO

B^VEBO

I^CBO

Testconditons

Min

120

Typ

Max

Unit

I^C=10ìA, I^B=0

I^E=1mA, I^C=0

V^CB=120V, I^E=0

100

240

1.0

Emitter Cut-off Current

I^EBO

V^BE=5V, I^C=0

DC Current Gain

h^FE

V^CE=5V, I^C=100mA

I^C=500mA, I^B=50mA

V^CE=5V, I^C=500mA

V^CE=5V, I^C=100mA

V^CB=10V, I^E=0, f=1MHz

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

V^{CE (sat)}

V^{BE (on)}

f^T

1.0

120

MHz

C^ob

hFE Classification

Marking

Rank

SCO

SCY

Type

80 160

120 240

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中文翻译

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