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KSB601Y PDF预览

KSB601Y

更新时间: 2024-10-28 23:15:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器功率放大器
页数 文件大小 规格书
6页 51K
描述
Low Frequency Power Amplifier

KSB601Y 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.81最大集电极电流 (IC):5 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):5000JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

KSB601Y 数据手册

 浏览型号KSB601Y的Datasheet PDF文件第2页浏览型号KSB601Y的Datasheet PDF文件第3页浏览型号KSB601Y的Datasheet PDF文件第4页浏览型号KSB601Y的Datasheet PDF文件第5页浏览型号KSB601Y的Datasheet PDF文件第6页 
KSB601  
Low Frequency Power Amplifier  
Medium Speed Switching Industrial Use  
Complement to KSD560  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
Value  
- 100  
- 100  
- 7  
Units  
V
V
CBO  
CEO  
EBO  
V
V
V
V
I
I
I
- 5  
A
C
- 8  
A
CP  
B
- 0.5  
1.5  
A
P
P
Collector Dissipation (T =25°C)  
W
W
°C  
°C  
C
a
Collector Dissipation (T =25°C)  
30  
C
C
T
Junction Temperature  
150  
J
T
Storage Temperature  
- 55 ~ 150  
STG  
* PW10ms, Duty Cycle50%  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

KSB601Y 替代型号

型号 品牌 替代类型 描述 数据表
KSB601YTU FAIRCHILD

完全替代

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast

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