是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.81 | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 100 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 5000 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 30 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
KSB601YTU | FAIRCHILD |
完全替代 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSB601-Y | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
KSB601YJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
KSB601YTSTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
KSB601YTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
KSB601YTU_NL | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
KSB707 | SAMSUNG |
获取价格 |
PNP (LOW FREQUENCY POWER AMPLIFIER) | |
KSB707 | FAIRCHILD |
获取价格 |
Low Frequency Power Amplifier | |
KSB707J69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
KSB707-O | SAMSUNG |
获取价格 |
暂无描述 | |
KSB707OJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti |