KSB708RTU

更新时间： 2024-10-29 13:09:11

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中文翻译

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数据手册

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KSB708RTU 数据手册

KSB707/708

Low Frequency Power Amplifier

•

Low Speed Switching

Industrial Use

Complement to KSD568/569

TO-220

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

- 80

CBO

Collector-Emitter Voltage

: B707

: B708

- 60

- 80

CEO

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current (DC)

- 7.0

EBO

- 15

- 3.5

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

1.5

Junction Temperature

150

Storage Temperature

- 55 ~ 150

STG

* PW≤300µs, Duty Cycle≤10%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

Test Condition

Typ.

Max.

- 10

200

Units

= - 60V, I = 0

µA

CBO

EBO

= - 5V, I = 0

= - 1V, I = - 3A

FE1

FE2

= - 1V, I = - 5A

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

= - 5A, I = - 0.5A

- 0.5

- 1.5

= - 5A, I = - 0.5A

* Pulse Test: PW≤350µs, Duty Cycle≤2%

Cassification

Classification

40 ~ 80

60 ~ 120

100 ~ 200

FE1

Rev. A, February 2000

12 3 4

中文翻译

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