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KSB708YTU PDF预览

KSB708YTU

更新时间: 2024-11-07 19:49:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网放大器晶体管
页数 文件大小 规格书
4页 56K
描述
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSB708YTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.82
最大集电极电流 (IC):7 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:PNP最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

KSB708YTU 数据手册

 浏览型号KSB708YTU的Datasheet PDF文件第2页浏览型号KSB708YTU的Datasheet PDF文件第3页浏览型号KSB708YTU的Datasheet PDF文件第4页 
KSB707/708  
Low Frequency Power Amplifier  
Low Speed Switching  
Industrial Use  
Complement to KSD568/569  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector-Base Voltage  
- 80  
V
CBO  
Collector-Emitter Voltage  
: B707  
: B708  
- 60  
- 80  
V
V
CEO  
V
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
- 7.0  
- 7.0  
V
A
EBO  
I
I
I
C
- 15  
A
CP  
B
- 3.5  
A
P
P
Collector Dissipation (T =25°C)  
40  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
1.5  
C
a
T
Junction Temperature  
Storage Temperature  
150  
J
T
- 55 ~ 150  
STG  
* PW300µs, Duty Cycle10%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
Test Condition  
Typ.  
Max.  
- 10  
- 10  
200  
Units  
I
I
V
V
= - 60V, I = 0  
µA  
µA  
CBO  
EBO  
CB  
E
= - 5V, I = 0  
EB  
C
h
h
V
V
= - 1V, I = - 3A  
40  
20  
FE1  
FE2  
CE  
CE  
C
= - 1V, I = - 5A  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
I
I
= - 5A, I = - 0.5A  
- 0.5  
- 1.5  
V
V
CE  
C
C
B
= - 5A, I = - 0.5A  
BE  
B
* Pulse Test: PW350µs, Duty Cycle2%  
h
Cassification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
60 ~ 120  
100 ~ 200  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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