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KSB707J69Z PDF预览

KSB707J69Z

更新时间: 2024-02-20 14:40:49
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网放大器晶体管
页数 文件大小 规格书
4页 87K
描述
Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSB707J69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
最大集电极电流 (IC):7 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

KSB707J69Z 数据手册

 浏览型号KSB707J69Z的Datasheet PDF文件第2页浏览型号KSB707J69Z的Datasheet PDF文件第3页浏览型号KSB707J69Z的Datasheet PDF文件第4页 
KSB707/708  
Low Frequency Power Amplifier  
Low Speed Switching  
Industrial Use  
Complement to KSD568/569  
1
TO-220  
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector-Base Voltage  
- 80  
V
CBO  
Collector-Emitter Voltage  
: B707  
: B708  
- 60  
- 80  
V
V
CEO  
V
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
- 7.0  
- 7.0  
V
A
EBO  
I
I
I
C
- 15  
A
CP  
B
- 3.5  
A
P
P
Collector Dissipation (T =25°C)  
40  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
1.5  
C
a
T
Junction Temperature  
150  
J
T
Storage Temperature  
- 55 ~ 150  
STG  
* PW300µs, Duty Cycle10%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
Test Condition  
Typ.  
Max.  
- 10  
- 10  
200  
Units  
I
I
V
V
= - 60V, I = 0  
µA  
µA  
CBO  
EBO  
CB  
E
= - 5V, I = 0  
EB  
C
h
h
V
V
= - 1V, I = - 3A  
40  
20  
FE1  
FE2  
CE  
CE  
C
= - 1V, I = - 5A  
C
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
I
I
= - 5A, I = - 0.5A  
- 0.5  
- 1.5  
V
V
CE  
C
C
B
V
= - 5A, I = - 0.5A  
BE  
B
* Pulse Test: PW350µs, Duty Cycle2%  
h
Cassification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
60 ~ 120  
100 ~ 200  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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