KSB1149Y

更新时间： 2024-10-29 13:02:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体二极管晶体管功率双极晶体管局域网
页数	文件大小	规格书
4页	49K
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KSB1149Y 数据手册

KSB1149

Low Collector Saturation Voltage

Built-in Damper Diode at E-C

•

High DC Current Gain

High Power Dissipation : P =1.3W (T =25°C)

TO-126

1. Emitter 2.Collector 3.Base

PNP Silicon Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

- 100

- 8

Units

CBO

CEO

EBO

Collector Current (DC)

*Collector Current (Pulse)

- 3

- 5

Collector Dissipation (T =25°C)

1.3

°C

Collector Dissipation (T =25°C)

Junction Temperature

150

Storage Temperature

- 55 ~ 150

STG

* PW≤10ms, Duty Cycle≤50%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

Test Condition

Min.

Typ.

Max.

- 10

Units

µA

= - 100V, I = 0

CBO

EBO

= - 5V, I = 0

- 2

= - 2V, I = - 1.5A

2000

1000

20000

FE1

FE2

= - 2V, I = - 3A

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Turn ON Time

= - 1.5A, I = - 1.5mA

- 0.9

- 1.5

0.5

- 1.2

- 2

= - 1.5A, I = - 1.5mA

= - 40V, I = - 1.5A

µs

= - I = - 1.5mA

Storage Time

STG

R = 27Ω

Fall Time

* Pulse test: PW≤350µs, duty Cycle≤2% Pulsed

Classification

2000 ~ 5000

4000 ~ 12000

6000 ~ 20000

FE1

Rev. A, February 2000

12 3 4

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与KSB1149Y相关器件

型号	品牌	获取价格	描述	数据表
KSB1149-Y	SAMSUNG	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic
KSB1149YS	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic
KSB1149YSTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic
KSB1151	SAMSUNG	获取价格	PNP (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)
KSB1151	FAIRCHILD	获取价格	Low Collector-Emitter Saturation Voltage Large Collector Current
KSB1151	CJ	获取价格	TO-126
KSB1151G	FAIRCHILD	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
KSB1151O	FAIRCHILD	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
KSB1151-O	SAMSUNG	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
KSB1151-R	SAMSUNG	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3