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KSB1366 PDF预览

KSB1366

更新时间: 2024-10-28 22:32:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管功率放大器局域网
页数 文件大小 规格书
4页 53K
描述
LOW FREQUENCY POWER AMPLIFIER

KSB1366 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220F包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.76外壳连接:ISOLATED
最大集电极电流 (IC):3 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):9 MHz
Base Number Matches:1

KSB1366 数据手册

 浏览型号KSB1366的Datasheet PDF文件第2页浏览型号KSB1366的Datasheet PDF文件第3页浏览型号KSB1366的Datasheet PDF文件第4页 
KSB1366  
LOW FREQUENCY POWER AMPLIFIER  
Complement to KSD2012  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 60  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Base Current  
- 60  
V
CEO  
EBO  
- 7  
V
I
I
- 3  
A
C
- 0.5  
2
A
B
P
Collector Dissipation (T =25°C)  
W
W
°C  
°C  
C
a
P
T
T
Collector Dissipation (T =25°C)  
25  
C
C
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
I
= - 50mA, I = 0  
- 60  
V
CEO  
CBO  
EBO  
C
B
I
I
V
V
= - 60V, I = 0  
- 100  
- 100  
320  
µA  
µA  
CB  
EB  
E
= - 7V, I = 0  
C
h
h
V
V
= - 5V, I = - 0.5A  
100  
20  
FE1  
FE2  
CE  
CE  
C
= - 5V, I = - 3A  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
I
= - 2A, I = - 0.2A  
- 0.5  
- 0.7  
9
- 1  
- 1  
V
V
CE  
C
B
V
V
= - 5V, I = - 0.5A  
C
BE  
CE  
CE  
f
Current Gain Bandwidth Product  
= - 5V, I = - 0.5A  
MHz  
T
C
h
Classification  
FE  
Classification  
Y
G
h
100 ~ 200  
150 ~ 320  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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