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KSB1151YS PDF预览

KSB1151YS

更新时间: 2024-10-30 11:15:07
品牌 Logo 应用领域
安森美 - ONSEMI 局域网晶体管
页数 文件大小 规格书
6页 201K
描述
PNP外延硅晶体管

KSB1151YS 技术参数

是否无铅:不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95Factory Lead Time:1 week
风险等级:1.56Is Samacsys:N
最大集电极电流 (IC):5 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

KSB1151YS 数据手册

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