是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-126 |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.3 |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
KSB1151YSTSTU | FAIRCHILD |
完全替代 |
5A, 60V, PNP, Si, POWER TRANSISTOR, TO-126 | |
KSB1151YSTU | ONSEMI |
功能相似 |
PNP外延硅晶体管 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSB1151YSTU_NL | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
KSB13002AR | SEMIHOW |
获取价格 |
High Voltage Switch Mode Application | |
KSB13003A | SEMIHOW |
获取价格 |
High Voltage Switch Mode Application | |
KSB13003AR | SEMIHOW |
获取价格 |
High Voltage Switch Mode Application | |
KSB13003ER | SEMIHOW |
获取价格 |
High Voltage Switch Mode Application | |
KSB13003H | SEMIHOW |
获取价格 |
High Voltage Switch Mode Application | |
KSB13003HR | SEMIHOW |
获取价格 |
High Voltage Switch Mode Application | |
KSB13060 | POWEREX |
获取价格 |
Power Bipolar Transistor, 600A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
KSB1366 | FAIRCHILD |
获取价格 |
LOW FREQUENCY POWER AMPLIFIER | |
KSB1366 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |