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KSB1151O PDF预览

KSB1151O

更新时间: 2024-10-29 21:17:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网晶体管
页数 文件大小 规格书
5页 47K
描述
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

KSB1151O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SIP包装说明:TO-126, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.72外壳连接:ISOLATED
最大集电极电流 (IC):5 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

KSB1151O 数据手册

 浏览型号KSB1151O的Datasheet PDF文件第2页浏览型号KSB1151O的Datasheet PDF文件第3页浏览型号KSB1151O的Datasheet PDF文件第4页浏览型号KSB1151O的Datasheet PDF文件第5页 
KSB1151  
Feature  
Low Collector-Emitter Saturation Voltage  
Large Collector Current  
High Power Dissipation : P =1.3W (T =25°C)  
C
a
Complement to KSD 1691  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 60  
- 60  
- 7  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
CBO  
V
CEO  
EBO  
V
I
I
I
- 5  
A
C
*Collector Current (Pulse)  
Base Current  
- 8  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
1.3  
W
W
°C  
°C  
C
a
Collector Dissipation (T =25°C)  
20  
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
* PW10ms, Duty Cycle50%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
Units  
µA  
I
V
V
= - 50V, I = 0  
- 10  
- 10  
CBO  
EBO  
CB  
EB  
E
I
= - 7V, I = 0  
µA  
C
h
h
h
V
V
V
= - 1V, I = - 0.1A  
60  
100  
50  
FE1  
FE2  
FE3  
CE  
CE  
CE  
C
= - 1V, I = - 2A  
200  
400  
C
= - 2V, I = - 5A  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Turn On Time  
I
I
= - 2A, I = - 0.2A  
- 0.14  
- 0.9  
0.15  
0.78  
0.18  
- 0.3  
- 1.2  
1
V
V
CE  
C
C
B
= - 2A, I = - 0.2A  
BE  
B
t
t
t
V
I
= - 10V, I = - 2A  
µs  
µs  
µs  
ON  
CC  
C
= - I =0.2A  
Storage Time  
B1  
B2  
2.5  
1
STG  
F
RL = 5Ω  
Fall Time  
* Pulse test: PW350µs, Duty Cycle2% Pulsed  
h
Classification  
FE  
Classification  
O
Y
G
h
100 ~ 200  
160 ~ 320  
200 ~ 400  
FE2  
©2003 Fairchild Semiconductor Corporation  
Rev. B, May 2003  

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