Datasheet > KRF7506

KRF7506

更新时间： 2024-10-14 05:41:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	81K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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KRF7506 数据手册

SMD Type

ICIC

HEXFET Power MOSFET

KRF7506

Features

Generation V Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Low Profile ( 1.1mm)

Available in Tape & Reel

Fast Switching

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

-1.7

Unit

Continuous Drain Current, V^GS@ -10V @ TA = 25

Continuous Drain Current, V^GS@ -10V @ TA = 70

Pulsed Drain Current *1

-1.4

I^DM

-9.6

1.25

m W/

Power Dissipation *2

@T^A= 25

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt *3

VGS

d^v/dt

5.0

V/ns

Junction and Storage Temperature Range

Maximum Junction-to-Ambient *2

T^J, TSTG

-55 to + 150

100

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 Surface mounted on FR-4 board, t 10sec

*3 I^SD

-1.2A, di/dt

-140A/ s, VDD

V(BR)DSS,TJ

150

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