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KRF7703 PDF预览

KRF7703

更新时间: 2024-11-18 05:41:03
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
2页 65K
描述
HEXFET Power MOSFET

KRF7703 数据手册

 浏览型号KRF7703的Datasheet PDF文件第2页 
SMD Type  
IC  
HEXFET Power MOSFET  
KRF7703  
TSSOP-8  
Unit: mm  
Features  
Ultra Low On-Resistance  
P-Channel MOSFET  
Very Small SOIC Package  
Low Profile ( 1.2mm)  
Available in Tape & Reel  
1,5,8: Drain  
2,3,6,7: Source  
4: Gate  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
VDS  
ID  
Rating  
-40  
Unit  
V
Drain- Source Voltage  
-6.0  
Continuous Drain Current, VGS @ -10V @ Ta = 25  
Continuous Drain Current, VGS @ -10V @ Ta = 70  
Pulsed Drain Current *1  
A
ID  
-4.7  
IDM  
PD  
-24  
1.5  
W
W
Power Dissipation *2  
Power Dissipation *2  
Linear Derating Factor  
Gate-to-Source Voltage  
@Ta= 25  
@Ta = 70  
PD  
0.96  
0.012  
20  
W/  
V
VGS  
Junction and Storage Temperature Range  
Maximum Junction-to-Ambient *2  
TJ, TSTG  
-55 to + 150  
83  
R
JA  
/W  
*1 Repetitive rating; pulse width limited by max. junction temperature.  
*2 Surface mounted on 1 in square Cu board  
1
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