Datasheet > KRF7805Z

KRF7805Z

更新时间： 2024-10-14 05:41:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	68K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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KRF7805Z 数据手册

SMD Type

ICIC

HEXFET Power MOSFET

KRF7805Z

Features

Absolute Maximum Ratings Ta = 25

Parameter

Continuous Drain Current, V^GS@ 10V,TA = 25

Continuous Drain Current, V^GS@ 10V,TA = 70

Pulsed Drain Current*1

Symbol

Rating

Unit

I^DM

P^D

120

2.5

Power Dissipation Ta = 25 *1

Power Dissipation Ta = 70 *1

Linear Derating Factor

P^D

1.6

0.02

Gate-to-Source Voltage

VGS

V^DS

Drain-Source Voltage

Operating Junction and Storage Temperature Range

Junction-to-Ambient

T^J,TSTG

-55 to + 150

Junction-to-Drain Lead

Single Pulse Avalanche Energy*3

Avalanche Current *2

E^AS

I^AR

*1 Pulse width

400 s; duty cycle

2%.

*2 Repetitive rating; pulse width limited by max. junction temperature.

*3 Starting T^J= 25 , L = 0.94mH,RG = 25 , IAS = 12A.

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