Datasheet > KRF8910

KRF8910

更新时间： 2024-11-18 05:41:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	67K
描述
HEXFET Power MOSFET

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数据手册

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KRF8910 数据手册

SMD Type

ICIC

HEXFET Power MOSFET

KRF8910

Features

Absolute Maximum Ratings Ta = 25

Parameter

Drain- Source Voltage

Symbol

V^DS

V^GS

Rating

Unit

Gate-to-Source Voltage

Continuous Drain Current, V^GS@ 10V Ta = 25

Continuous Drain Current,V^GS@ 10V TC = 70

Pulsed Drain Current *1

8.3

I^DM

1.3

Maximum Power Dissipation Ta = 25

Maximum Power Dissipation Ta = 70

Linear Derating Factor

P^D

0.016

-55 to + 150

Operating Junction and Storage Temperature Range

Junction-to-Drain Lead

T^J,TSTG

Maximum Junction-to-Ambient *2,3

Single Pulse Avalanche Energy *4

Avalanche Current *1

62.5

E^AS

I^AR

8.2

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 when mounted on 1 inch square copper board.

*3 R is measured at TJ of approxmately 90

*4Starting TJ = 25 , L = 0.57mH, RG = 25 , IAS = 8.2A.

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