Datasheet > KRFR9210

KRFR9210

更新时间： 2024-11-18 05:41:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	75K
描述
HEXFET Power MOSFET

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数据手册

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KRFR9210 数据手册

SMD Type

TransistIoCrs

HEXFET Power MOSFET

KRFR9210

TO-252

Unit: mm

Features

+0.15

-0.15

+0.1

2.30

-0.1

6.50

Available in Tape & Reel

Surface Mount

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Fast Switching

0.127

max

P-Channel

+0.1

0.80

-0.1

Dynamic dv/dt Rating

Repetitive Avalanche Rated

+0.1

0.60

-0.1

1. Gate

2.3

4.60

+0.15

-0.15

2. Drain

3. Source

Absolute Maximum Ratings Ta = 25

Parameter

Continuous Drain Current, V^GS@ -10V,Tc = 25

Continuous Drain Current, V^GS@ -10V,Tc = 100

Pulsed Drain Current*1

Symbol

Rating

Unit

-1.9

-1.2

-7.6

I^DM

Power Dissipation Tc = 25

2.5

0.2

0.02

Power Dissipation (PCB Mount) Ta = 25

Linear Derating Factor

Linear Derating Factor (PCB Mount)

Gate-to-Source Voltage

V^GS

E^AS

Single Pulse Avalanche Energy*3

Avalanche Current *1

300

-1.9

2.5

-5

I^AR

Repetitive Avalanche Energy *1

Peak Diode Recovery dv/dt *2

Operating Junction and Storage Temperature Range

Junction-to-Case

E^AR

d^v/dt

T^J,TSTG

V/ns

-55 to + 150

Junction-to-Ambient

110

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 I^SD-1.9A, di/dt 70A/ s, VDD 150

*3 VDD=-50V,Starting TJ = 25 , L = 124 mH,RG = 25 , IAS = -1.9A.

V(BR)DSS,TJ

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