Datasheet > KRF9952

KRF9952

更新时间： 2024-11-18 12:31:47

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	1097K
描述
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET

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KRF9952 数据手册

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TransistIIoCICICCrs

Product specification

KRF9952

Features

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Surface Mount

Very Low Gate Charge and Switching Losses

Fully Avalanche Rated

1 : Source1

2 : Gate1

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

3 : Source2

4 : Gate2

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

V^GS

I^D

N-Channel

P-Channel

Unit

Gate-to-Source Voltage

3.5

2.8

-2.3

-1.8

-10

Continuous Drain Current, V^GS@ 10V @ T^a= 25

Continuous Drain Current, V^GS@ 10V @ T^a= 70

Pulsed Drain Current *1

I^D

I^DM

I^S

Continuous Source Current (Diode Conduction)

1.7

-1.3

Power Dissipation

@T^a= 25

@T^a= 70

P^D

1.3

Power Dissipation

Single Pulse Avalanche Energy

Avalanche Current

E^AS

I^AR

2.0

-1.3

0.25

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt *2

E^AR

d^v/d^t

V/ns

5.0

-5

-55 to + 150

62.5

Junction and Storage Temperature Range

Maximum Junction-to-Ambient *3

T^J, T^STG

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 N-Channel I^SD

P-Channel I^SD

2.0A, dⁱ/d^t

-1.3A, dⁱ/d^t

100A/ s, V^DD

84A/ s, V^DD

V^(BR)DSS, T^J

150

*3 Surface mounted on FR-4 board, t

10sec.

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sales@twtysemi.com

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4008-318-123

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