Datasheet > KRF7706

KRF7706

更新时间： 2024-10-14 05:41:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	66K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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KRF7706 数据手册

SMD Type

ICIC

HEXFET Power MOSFET

KRF7706

TSSOP-8

Unit: mm

Features

Ultra Low On-Resistance

P-Channel MOSFET

Very Small SOIC Package

Low Profile ( 1.2mm)

Available in Tape & Reel

1,5,8: Drain

2,3,6,7: Source

4: Gate

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^DS

Rating

-30

Unit

Drain- Source Voltage

-7

Continuous Drain Current, V^GS@ -10V @ Ta = 25

Continuous Drain Current, V^GS@ -10V @ Ta = 70

Pulsed Drain Current *1

-5.7

I^DM

-28

1.51

0.96

0.01

Power Dissipation *2

Linear Derating Factor

Gate-to-Source Voltage

@T^a= 25

@T^a= 70

VGS

Junction and Storage Temperature Range

Maximum Junction-to-Ambient *2

T^J, TSTG

-55 to + 150

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 Surface mounted on 1 in square Cu board

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