Datasheet > KRF7530

KRF7530

更新时间： 2024-10-14 12:31:35

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	144K
描述
Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET

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数据手册

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KRF7530 数据手册

SMD Type

ICIC

Product specification

KRF7530

Features

Trench Technology

Ultra Low On-Resistance

Dual N-Channel MOSFET

Very Small SOIC Package

Low Profile ( 1.1mm)

Available in Tape & Reel

Absolute Maximum Ratings Ta = 25

Parameter

Drain- Source Voltage

Symbol

V^DS

I^D

Rating

Unit

5.4

Continuous Drain Current, V^GS@ 4.5V,Ta = 25

Continuous Drain Current, V^GS@ 4.5V,T^A= 70

Pulsed Drain Current*1

I^D

4.3

I^DM

P^D

1.3

Power Dissipation Ta = 25

P^D

0.8

Power Dissipation Ta = 70

Linear Derating Factor

mW/

Single Pulse Avalanche Energy *2

Gate-to-Source Voltage

E^AS

V^GS

Junction and Storage Temperature Range

Junction-to-Ambient *1

T^J, T^STG

-55 to + 150

100

1* Surface mounted on FR-4 board, t

10sec.

*2 Starting T^J= 25 , L = 2.6mH,R^G= 25 , I^AS= 5.0A.

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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