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KRF7555 PDF预览

KRF7555

更新时间: 2024-11-21 12:31:35
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
2页 142K
描述
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET

KRF7555 数据手册

 浏览型号KRF7555的Datasheet PDF文件第2页 
ICIC  
Product specification  
KRF7555  
Features  
Trench Technology  
Ultra Low On-Resistance  
Dual P-Channel MOSFET  
Very Small SOIC Package  
Low Profile ( 1.1mm)  
Available in Tape & Reel  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
VDS  
ID  
Rating  
-20  
Unit  
A
Drain-Source Voltage  
-4.3  
Continuous Drain Current, VGS @ -4.5V @ TA = 25  
Continuous Drain Current, VGS @ -4.5V @ TA = 70  
Pulsed Drain Current *1  
ID  
-3.4  
IDM  
-34  
1.25  
0.8  
W
W
Power Dissipation *2  
@TA= 25  
@TA= 70  
PD  
Power Dissipation *2  
Linear Derating Factor  
10  
m W/  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy*2  
Peak Diode Recovery dv/dt *3  
VGS  
EAS  
12  
36  
Mj  
dv/dt  
1.1  
V/ns  
Junction and Storage Temperature Range  
Maximum Junction-to-Ambient *2  
TJ, TSTG  
-55 to + 150  
100  
R
JA  
/W  
*1 Repetitive rating; pulse width limited by max. junction temperature.  
*2 Surface mounted on FR-4 board, t 10sec  
*3 ISD  
-2.0A, di/dt  
-140A/ s, VDD  
V(BR)DSS,TJ  
150  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
4008-318-123  

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