Datasheet > KRF7555

KRF7555

更新时间： 2024-10-14 12:31:35

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	142K
描述
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET

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中文翻译

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数据手册

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KRF7555 数据手册

SMD Type

ICIC

Product specification

KRF7555

Features

Trench Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Low Profile ( 1.1mm)

Available in Tape & Reel

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^DS

I^D

Rating

-20

Unit

Drain-Source Voltage

-4.3

Continuous Drain Current, V^GS@ -4.5V @ T^A= 25

Continuous Drain Current, V^GS@ -4.5V @ T^A= 70

Pulsed Drain Current *1

I^D

-3.4

I^DM

-34

1.25

0.8

Power Dissipation *2

@T^A= 25

@T^A= 70

P^D

Power Dissipation *2

Linear Derating Factor

m W/

Gate-to-Source Voltage

Single Pulse Avalanche Energy*2

Peak Diode Recovery dv/dt *3

V^GS

EAS

d^v/d^t

1.1

V/ns

Junction and Storage Temperature Range

Maximum Junction-to-Ambient *2

T^J, T^STG

-55 to + 150

100

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 Surface mounted on FR-4 board, t 10sec

*3 I^SD

-2.0A, dⁱ/d^t

-140A/ s, V^DD

V^(BR)DSS,T^J

150

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sales@twtysemi.com

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4008-318-123

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