Datasheet > KRF7509

KRF7509

更新时间： 2024-11-18 05:41:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	83K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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KRF7509 数据手册

SMD Type

ICIC

HEXFET Power MOSFET

KRF7509

Features

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

N-Channel

P-Channel

Unit

2.7

2.1

-30

-2

Continuous Drain Current, V^GS@ 10V @ Ta = 25

Continuous Drain Current, V^GS@ 10V @ Ta = 70

Pulsed Drain Current *1

-1.6

-16

I^DM

1.25

0.8

Power Dissipation

@T^a= 25

@Ta= 70

P^D

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

m W/

VGS

V^GSM

Gate-to-Source Voltage Single Pulse tp<10

Peak Diode Recovery dv/dt *2

5.0

dv/dt

V/ns

-55 to + 150

100

Junction and Storage Temperature Range

Maximum Junction-to-Ambient *3

T^J, TSTG

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 N-Channel I^SD

P-Channel ISD

1.7A, di/dt

-1.2A, di/dt

120A/ s, VDD

160A/ s, VDD

V(BR)DSS, TJ

150

*3 Surface mounted on FR-4 board, t

10sec.

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