Datasheet > KRF7601

KRF7601

更新时间： 2024-10-14 12:32:19

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	216K
描述
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET

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中文翻译

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数据手册

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KRF7601 数据手册

SSMMDD TTyyppee

MOSFIECICT

Product specification

KRF7601

Features

Generation V Technology

Ultra Low On-Resistance

N-Channel MOSFET

Very Small SOIC Package

Low Profile ( 1.1mm)

Available in Tape & Reel

Fast Switching

Absolute Maximum Ratings Ta = 25

Parameter

Continuous Drain Current, V^GS@ 4.5V,Ta = 25

Continuous Drain Current, V^GS@ 4.5V,T^A= 70

Pulsed Drain Current*1

Symbol

I^D

Rating

Unit

5.7

I^D

4.6

I^DM

P^D

1.8

Power Dissipation Ta = 25 *1

Linear Derating Factor

Gate-to-Source Voltage

V^GS

d^v/d^t

Peak Diode Recovery dv/dt*1

Junction and Storage Temperature Range

Junction-to-Ambient *2

-55 to + 150

V/ns

TJ, TSTG

* I^SD

3.8A, dⁱ/d^t

96A/ s, V^DD

V^(BR)DSS,T^J

10sec.

150

*2 Surface mounted on FR-4 board, t

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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