Datasheet > KRF7507

KRF7507

更新时间： 2024-11-18 12:04:19

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	452K
描述
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET

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中文翻译

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数据手册

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KRF7507 数据手册

SSMD Type

TransistIoCICrs

Product specification

KRF7507

Features

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

I^D

N-Channel

P-Channel

Unit

2.4

1.9

-20

-1.7

-1.4

-14

Continuous Drain Current V^GST^a= 25

Continuous Drain Current V^GST^a= 70

Pulsed Drain Current *1

I^D

I^DM

1.25

0.8

Power Dissipation

@T^a= 25

@T^a= 70

P^D

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

mW/

V^GS

V^GSM

Gate-to-Source Voltage Single Pulse tp<10

Peak Diode Recovery dv/dt *2

dv/dt

5.0

-5.0

V/ ns

-55 to + 150

100

Junction and Storage Temperature Range

Maximum Junction-to-Ambient*3

T^J, T^STG

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 N-Channel I^SD

P-Channel I^SD

1.7A, di/dt

-1.2A, dⁱ/d^t

100A/ s, VDD

50A/ s, V^DD

V(BR)DSS, TJ

V^(BR)DSS, T^J

150

*3 Surface mounted on FR-4 board, t

10sec.

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