Datasheet > KRF7501

KRF7501

更新时间： 2024-10-14 05:41:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	84K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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KRF7501 数据手册

SMD Type

ICIC

HEXFET Power MOSFET

KRF7501

Features

Generation V Technology

Ulrtra Low On-Resistance

Dual N-Channel MOSFET

Very Small SOIC Package

Low Profile ( 1.1mm)

Available in Tape & Reel

Fast Switching

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

Rating

Unit

2.4

Continuous Drain Current, V^GS@ 10V,Ta = 25

Continuous Drain Current, V^GS@ 10V,TA = 70

Pulsed Drain Current*1

1.9

I^DM

P^D

1.25

Power Dissipation Ta = 25 *1

Power Dissipation Ta = 70 *1

Linear Derating Factor

P^D

0.8

0.01

V^GSM

V^GS

Gate-to-Source Voltage Single Pulse tp 10

Gate-to-Source Voltage

Peak Diode Recovery dv/dt*1

d^v/dt

V/ns

Junction and Storage Temperature Range

Junction-to-Ambient *2

T^J, TSTG

-55 to + 150

100

* I^SD

1.7A, di/dt

66A/ s, VDD

V(BR)DSS,TJ

10sec.

150

*2 Surface mounted on FR-4 board, t

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