Datasheet > KRF7506

KRF7506

更新时间： 2024-11-18 12:31:35

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	263K
描述
Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET

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中文翻译

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数据手册

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KRF7506 数据手册

SSSMMMDDD TTTyyypppee

TransistoCICIrCs

ECC

Product specification

KRF7506

Features

Generation V Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Low Profile ( 1.1mm)

Available in Tape & Reel

Fast Switching

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

I^D

Rating

-1.7

Unit

Continuous Drain Current, VGS @ -10V @ TA = 25

Continuous Drain Current, V^GS@ -10V @ T^A= 70

Pulsed Drain Current *1

-1.4

I^DM

P^D

-9.6

1.25

m W/

Power Dissipation *2

@T^A= 25

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt *3

V^GS

d^v/d^t

5.0

V/ns

Junction and Storage Temperature Range

Maximum Junction-to-Ambient *2

T^J, T^STG

-55 to + 150

100

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 Surface mounted on FR-4 board, t 10sec

*3 I^SD

-1.2A, dⁱ/d^t

-140A/ s, V^DD

V^(BR)DSS,T^J

150

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