Datasheet > KI2301BDS

KI2301BDS

更新时间： 2024-11-17 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	50K
描述
P-Channel 2.5-V (G-S) MOSFET

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中文翻译

获取价格

数据手册

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KI2301BDS 数据手册

SMD Type

Transistors

P-Channel 2.5-V (G-S) MOSFET

KI2301BDS

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

RoH Lead (Pb)-Free Version is RoHS Compliant.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

5 sec

Steady State

-20

Unit

Gate-Source Voltage

V^GS

Continuous Drain Current (T^J=150 ) *2 TA=25

------------------------------------------------TA=70

-2.4

-1.9

-2.2

-1.8

-10

Pulsed Drain Current *1

I^DM

I^S

Continuous Source Current (diode conduction) *2

-0.72

-0.6

0.9

0.7

Power Dissipation *2

T^A=25

0.57

0.45

-------------------------------------------------TA=70

150

Jumction Temperature

T^j

-55 to +150

Storage Temperature

Tstg

* 1. Pulse width limited by maximum junction temperature.

* 2. Surface Mounted on FR4 Board, t 5 sec.

Thermal Resistance Ratings Ta = 25

Parameter

Symbol

R^thJA

Typical

Maximum

145

Unit

Maximum Junction-to-Ambient *1

Maximum Junction-to-Ambient *2

120

140

175

* 1. Surface Mounted on FR4 Board, t

* 2. Surface Mounted on FR4 Board.

5 sec.

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