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KI2301BDS PDF预览

KI2301BDS

更新时间: 2024-10-30 05:40:51
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
2页 50K
描述
P-Channel 2.5-V (G-S) MOSFET

KI2301BDS 数据手册

 浏览型号KI2301BDS的Datasheet PDF文件第2页 
SMD Type  
Transistors  
P-Channel 2.5-V (G-S) MOSFET  
KI2301BDS  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
1
2
RoH Lead (Pb)-Free Version is RoHS Compliant.  
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
1. Gate  
2. Source  
3. Drain  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
5 sec  
Steady State  
-20  
Unit  
V
V
Gate-Source Voltage  
VGS  
8
Continuous Drain Current (TJ=150 ) *2 TA=25  
------------------------------------------------TA=70  
-2.4  
-1.9  
-2.2  
-1.8  
ID  
A
-10  
Pulsed Drain Current *1  
IDM  
IS  
A
A
Continuous Source Current (diode conduction) *2  
-0.72  
-0.6  
0.9  
0.7  
Power Dissipation *2  
TA=25  
PD  
W
0.57  
0.45  
-------------------------------------------------TA=70  
150  
Jumction Temperature  
Tj  
-55 to +150  
Storage Temperature  
Tstg  
* 1. Pulse width limited by maximum junction temperature.  
* 2. Surface Mounted on FR4 Board, t 5 sec.  
Thermal Resistance Ratings Ta = 25  
Parameter  
Symbol  
RthJA  
Typical  
Maximum  
145  
Unit  
/W  
Maximum Junction-to-Ambient *1  
Maximum Junction-to-Ambient *2  
120  
140  
175  
* 1. Surface Mounted on FR4 Board, t  
* 2. Surface Mounted on FR4 Board.  
5 sec.  
1
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