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KI2301T PDF预览

KI2301T

更新时间: 2024-06-27 12:12:10
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
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描述
P-Channel MOSFET

KI2301T 数据手册

  
SMD Type  
MOSFET  
P-Channel Enhancement MOSFET  
KI2301T  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
+0.1  
-0.1  
0.4  
3
Features  
VDS (V) =-12V  
ID =-2.8 A  
1
2
RDS(ON) 115mΩ (VGS =-4.5V)  
RDS(ON) 160mΩ (VGS =-2.5V)  
+0.1  
+0.05  
-0.01  
0.95  
-0.1  
0.1  
+0.1  
-0.1  
1.9  
1.Gate  
2.Source  
3.Drain  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
-12  
Unit  
V
VDS  
GS  
Gate-Source Voltage  
V
±10  
Continuous Drain Current  
Power Dissipation  
I
D
-2.8  
A
P
D
1.2  
W
Junction Temperature  
T
J
150  
Junction and Storage Temperature Range  
Tstg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body leakage current  
Gate Threshold Voltage  
Symbol  
Test Conditions  
Min  
-12  
Typ  
-18  
Max  
Unit  
V
V
DSS  
DSS  
GSS  
GS(th)  
I
D
=-250μA, VGS=0V  
DS=-12V, VGS=0V,T  
DS=0V, VGS=±10V  
I
1
V
V
V
V
V
j
= 25℃  
μA  
nA  
V
I
±100  
-1.1  
115  
V
-0.45  
DS=VGS ID=-250μA  
GS=-4.5V, I  
GS=-2.5V, I  
D
=-1A  
Static Drain-Source On-Resistance  
RDS(On)  
mΩ  
D=-0.5A  
160  
Marking  
Marking  
A19T  
1
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