Datasheet > KDS193_12

KDS193_12

更新时间： 2024-11-18 11:29:27

品牌	Logo	应用领域
KEC		二极管局域网
页数	文件大小	规格书
2页	367K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

获取价格

数据手册

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KDS193_12 数据手册

SEMICONDUCTOR

KDS193

SILICON EPITAXIAL PLANAR DIODE

TECHNICAL DATA

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

· Small Package : SOT-23.

DIM

MILLIMETERS

· Low Forward Voltag : V_F=0.9V(Typ.).

· Fast Reverse Recovery Time : t_rr=1.6ns(Typ.).

· Small Total Capacitance : C_T=0.9pF(Typ.).

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

MAXIMUM RATING (Ta=25℃)

0.20 MIN

1.00+0.20/-0.10

CHARACTERISTIC

Maximum (Peak) Reverse Voltage

Reverse Voltage

SYMBOL

RATING

UNIT

V_RM

V_R

I_FM

I_O

1. NC

2. ANODE

3. CATHODE

Maximum (Peak) Forward Current

Average Forward Current

Surge Current (10ms)

300

100

I_FSM

P_D

Power Dissipation

150

℃

SOT-23

T_j

Junction Temperature

150

T_stg

Storage Temperature Range

-55∼ 150

℃

Marking

Lot No.

Type Name

F 3

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

SYMBOL

V_F(1)

V_F(2)

V_F(3)

I_R

TEST CONDITION

MIN.

TYP.

0.60

0.72

0.90

MAX.

UNIT

I_F=1mA

I_F=10mA

Forward Voltage

I_F=100mA

V_R=80V

1.20

0.5

3.0

4.0

Reverse Current

μA

C_T

V_R=0, f=1MHz

I_F=10mA

Total Capacitance

Reverse Recovery Time

0.9

t_rr

1.6

2012. 3. 29

Revision No : 2

1/2

中文翻译

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