Datasheet > KDS2572

KDS2572

更新时间： 2024-11-20 12:04:19

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	273K
描述
RDS(ON) = 0.040 (Typ.), VGS = 10V Maximized efficiency at high frequencies

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KDS2572 数据手册

SSMMDD TTyyppee

MOSFIECT

Product specification

KDS2572

Features

R^DS(ON)= 0.040 (Typ.), V^GS= 10V

Q^g(TOT)= 29nC (Typ.), V^GS= 10V

Low QRR Body Diode

Maximized efficiency at high frequencies

UIS Rated

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

150

Unit

Gate to Source Voltage

V^GS

4.9

Drain Current Continuous (T^C= 25 ) *1

Drain Current Continuous (T^C= 100 ) *1

Power dissipation

I^D

3.1

2.5

P^D

Derate above 25

mW/

Operating and Storage Temperature

Thermal Resistance Junction to Case

Thermal Resistance Junction to Case at 10 seconds *2

Thermal Resistance Junction to Case at steady state *2

*1 V^GS= 10V, R^qJA= 50 /W

T^J, T^STG

-55 to 150

*2 R ^JAis measured with 1.0in²copper on FR-4 board

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4008-318-123

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