Datasheet > KDS3512

KDS3512

更新时间： 2024-11-17 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	63K
描述
80V N-Channel PowerTrench MOSFET

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中文翻译

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KDS3512 数据手册

SMD Type

ICIC

80V N-Channel PowerTrench MOSFET

KDS3512

Features

4.0 A, 80 V. RDS(ON) = 70m @ VGS = 10 V

R^DS(ON)= 80m @ VGS = 6 V

Low gate charge (13 nC typical)

Fast switching speed

High performance trench technology for extremely low RDS(ON)

High power and current handling capability

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

Unit

Gate to Source Voltage

V^GS

Drain Current Continuous (Note 1a)

Drain Current Pulsed

I^D

Power dissipation

(Note 1a)

2.5

(Note 1b)

(Note 1c)

1.2

-55 to 175

Operating and Storage Temperature

T^J, TSTG

Thermal Resistance Junction to Ambient (Note 1a)

Thermal Resistance Junction to Case (Note 1)

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