Datasheet > KDS2572

KDS2572

更新时间： 2024-11-20 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	55K
描述
N-Channel UltraFET Trench MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KDS2572 数据手册

SMD Type

ICIC

N-Channel UltraFET Trench MOSFET

KDS2572

Features

RDS(ON) = 0.040 (Typ.), VGS = 10V

Qg(TOT) = 29nC (Typ.), VGS = 10V

Low QRR Body Diode

Maximized efficiency at high frequencies

UIS Rated

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

150

Unit

Gate to Source Voltage

V^GS

4.9

Drain Current Continuous (T^C= 25 ) *1

Drain Current Continuous (T^C= 100 ) *1

Power dissipation

3.1

2.5

P^D

Derate above 25

mW/

Operating and Storage Temperature

Thermal Resistance Junction to Case

Thermal Resistance Junction to Case at 10 seconds *2

Thermal Resistance Junction to Case at steady state *2

*1 V^GS= 10V, RqJA = 50 /W

TJ, TSTG

-55 to 150

*2 R ^JAis measured with 1.0in²copper on FR-4 board

www.kexin.com.cn

中文翻译

下载PDF

与KDS2572相关器件

型号	品牌	获取价格	描述	数据表
KDS-29008	ETC	获取价格	Speaker - Mylar Cone
KDS33	CK-COMPONENTS	获取价格	Intrusion Switches
KDS33	ITT	获取价格	Intrusion Switches
KDS33	LITTELFUSE	获取价格	Intrusion Switch
KDS3512	TYSEMI	获取价格	4.0 A, 80 V. RDS(ON) = 70m VGS = 10 V High power and current handling capability
KDS3512	KEXIN	获取价格	80V N-Channel PowerTrench MOSFET
KDS3601	KEXIN	获取价格	100V Dual N-Channel PowerTrench MOSFET
KDS3601	TYSEMI	获取价格	1.3 A, 100 V. RDS(ON) = 480m RDS(ON) = 530m Fast switching speed
KDS3912	TYSEMI	获取价格	3 A, 100 V. RDS(ON) = 125m RDS(ON) = 135m Fast switching speed
KDS3912	KEXIN	获取价格	100V Dual N-Channel PowerTrench MOSFET