Datasheet > K7P323666M-GC25T

K7P323666M-GC25T

更新时间： 2024-11-15 04:18:15

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K7P323666M-GC25T 技术参数

K7P323666M

K7P321866M

1Mx36 & 2Mx18 SRAM

32Mb M-die LW SRAM Specification

119BGA with Pb & Pb-Free

(RoHS compliant)

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AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

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EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.

ALL INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-

lar applications where Product failure could result in loss of life or personal or physical harm, or any military

or defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Dec. 2005

Rev 1.2

- 1 -

12 3 4 5 6 7...14

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型号	品牌	获取价格	描述	数据表
K7P323666M-GC300	SAMSUNG	获取价格	暂无描述
K7P323666M-HC250	SAMSUNG	获取价格	Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
K7P323674C	SAMSUNG	获取价格	1Mx36 & 2Mx18 SRAM
K7P323674C-GC250	SAMSUNG	获取价格	Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA
K7P323674C-HC250	SAMSUNG	获取价格	Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
K7P323674C-HC300	SAMSUNG	获取价格	Late-Write SRAM, 1MX36, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
K7P323688M-GC25	SAMSUNG	获取价格	SRAM
K7P323688M-GC250	SAMSUNG	获取价格	Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA
K7P323688M-GC30	SAMSUNG	获取价格	SRAM
K7P323688M-GC300	SAMSUNG	获取价格	Late-Write SRAM, 1MX36, 1.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, B