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K7P401811A-H30 PDF预览

K7P401811A-H30

更新时间: 2024-11-15 05:34:15
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
13页 294K
描述
Standard SRAM, 256KX18, 1.8ns, CMOS, PBGA119, 14 X 22 MM, BGA-119

K7P401811A-H30 数据手册

 浏览型号K7P401811A-H30的Datasheet PDF文件第2页浏览型号K7P401811A-H30的Datasheet PDF文件第3页浏览型号K7P401811A-H30的Datasheet PDF文件第4页浏览型号K7P401811A-H30的Datasheet PDF文件第5页浏览型号K7P401811A-H30的Datasheet PDF文件第6页浏览型号K7P401811A-H30的Datasheet PDF文件第7页 
K7P403611A  
K7P401811A  
128Kx36 & 256Kx18 SRAM  
Document Title  
128Kx36 & 256Kx18 Synchronous Pipelined SRAM  
Revision History  
Draft Date  
Remark  
Rev.No.  
History  
Mar. 1999  
Nov. 1999  
Preliminary  
Final  
0.0  
1.0  
- Preliminary specification release  
- Final specification release  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Rev 1.0  
Nov. 1999  
- 1 -  

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Standard SRAM, 256KX18, 1.8ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P401811A-HC250 SAMSUNG

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Late-Write SRAM, 256KX18, 2ns, CMOS, PBGA119
K7P401811A-HC25T SAMSUNG

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Late-Write SRAM, 256KX18, 2ns, CMOS, PBGA119
K7P401811A-HC27T SAMSUNG

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Late-Write SRAM, 256KX18, 1.9ns, CMOS, PBGA119
K7P401811A-HC300 SAMSUNG

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Late-Write SRAM, 256KX18, 1.8ns, CMOS, PBGA119
K7P401811A-HC30T SAMSUNG

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Late-Write SRAM, 256KX18, 1.8ns, CMOS, PBGA119
K7P401822B-HC16 SAMSUNG

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128Kx36 & 256Kx18 Synchronous Pipelined SRAM
K7P401822B-HC160 SAMSUNG

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Standard SRAM, 256KX18, 3ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P401822B-HC20 SAMSUNG

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128Kx36 & 256Kx18 Synchronous Pipelined SRAM
K7P401822B-HC25 SAMSUNG

获取价格

128Kx36 & 256Kx18 Synchronous Pipelined SRAM