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K7P401823B PDF预览

K7P401823B

更新时间: 2024-11-11 11:27:43
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
13页 312K
描述
128Kx36 & 256Kx18 SRAM

K7P401823B 数据手册

 浏览型号K7P401823B的Datasheet PDF文件第2页浏览型号K7P401823B的Datasheet PDF文件第3页浏览型号K7P401823B的Datasheet PDF文件第4页浏览型号K7P401823B的Datasheet PDF文件第5页浏览型号K7P401823B的Datasheet PDF文件第6页浏览型号K7P401823B的Datasheet PDF文件第7页 
K7P403623B  
K7P401823B  
128Kx36 & 256Kx18 SRAM  
Document Title  
128Kx36 & 256Kx18 Synchronous Pipelined SRAM  
Revision History  
Rev. No.  
History  
DraftDate  
Remark  
Rev. 0.0  
- Preliminary specification release  
Oct. 2002  
Preliminary  
Rev. 0.1  
Rev. 0.2  
- Update DC CHARACTERISTICS  
x36 : IDD6 : TBD -> 300, IDD65 -> 290, IDD7 -> 280.  
x18 : IDD6 : TBD -> 290, IDD65 -> 280, IDD7 -> 270.  
Jan. 2003  
Feb. 2003  
Preliminary  
Preliminary  
- Change simbol in DC CHARACTERISTICS  
IDD6, IDD65, IDD7 -> IDD65, IDD70, IDD75  
Rev. 1.0  
Rev. 1.1  
- Final Version  
Jun. 2003  
Jun. 2003  
Final  
Final  
- Add Single ended differential clock on clock comment.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Jul. 2003  
- 1 -  
Rev 1.1  

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Application Specific SRAM, 256KX18, 6.5ns, CMOS, PBGA119
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K7P401866A-H30T SAMSUNG

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K7P403611A-H25 SAMSUNG

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K7P403611A-H2700 SAMSUNG

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Standard SRAM, 128KX36, 1.9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119