Datasheet > K7P403622M

K7P403622M

更新时间： 2024-11-10 22:32:31

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
12页	242K
描述
128Kx36 & 256Kx18 Synchronous Pipelined SRAM

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K7P403622M 数据手册

K7P403622M

K7P401822M

128Kx36 & 256Kx18 SRAM

Document Title

128Kx36 & 256Kx18 Synchronous Pipelined SRAM

Revision History

Draft Date

Remark

Rev. No.

Rev. 0.0

Rev. 0.1

History

Preliminary

- Preliminary specification release

- Change specification format.

No change was made in parameters.

April, 1997

Jan. 1998

Preliminary

Final

- Updated IDD, ISB and Input High Level.

Updated tKHKL, tKLKH, tKHQX, tKHQX1 and AC Test Conditions.

For JTAG, updated Vendor Definition and added tSVCH/tCHSX.

Rev. 0.2

Rev. 1.0

- Final specification release

Dec. 1998

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.

Dec. 1998

- 1 -

Rev 1.0

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
K7P403622M-H16	SAMSUNG	获取价格	128Kx36 & 256Kx18 Synchronous Pipelined SRAM
K7P403622M-H1600	SAMSUNG	获取价格	Standard SRAM, 128KX36, 3ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P403622M-H19	SAMSUNG	获取价格	128Kx36 & 256Kx18 Synchronous Pipelined SRAM
K7P403622M-H1900	SAMSUNG	获取价格	Standard SRAM, 128KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P403622M-H20	SAMSUNG	获取价格	128Kx36 & 256Kx18 Synchronous Pipelined SRAM
K7P403622M-H2000	SAMSUNG	获取价格	Standard SRAM, 128KX36, 2.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P403622M-HC16T	SAMSUNG	获取价格	Late-Write SRAM, 128KX36, 3ns, CMOS, PBGA119
K7P403622M-HC19T	SAMSUNG	获取价格	Late-Write SRAM, 128KX36, 3.5ns, CMOS, PBGA119
K7P403622M-HC200	SAMSUNG	获取价格	Late-Write SRAM, 128KX36, 2.5ns, CMOS, PBGA119
K7P403622M-HC20T	SAMSUNG	获取价格	Late-Write SRAM, 128KX36, 2.5ns, CMOS, PBGA119