是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | BGA, |
针数: | 119 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.92 | 最长访问时间: | 6.5 ns |
其他特性: | ALSO REQUIRES 2.5V I/O SUPPLY | JESD-30 代码: | R-PBGA-B119 |
长度: | 22 mm | 内存密度: | 4718592 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 36 |
功能数量: | 1 | 端子数量: | 119 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 128KX36 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 认证状态: | Not Qualified |
最大供电电压 (Vsup): | 3.45 V | 最小供电电压 (Vsup): | 3.15 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子节距: | 1.27 mm |
端子位置: | BOTTOM | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K7P403623M-H70 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX36, 7ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 | |
K7P403623M-H7000 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX36, 7ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 | |
K7P403623M-H7500 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 | |
K7P403623M-HC650 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX36, 6.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | |
K7P403623M-HC65T | SAMSUNG |
获取价格 |
Application Specific SRAM, 128KX36, 6.5ns, CMOS, PBGA119 | |
K7P403623M-HC70T | SAMSUNG |
获取价格 |
Application Specific SRAM, 128KX36, 7ns, CMOS, PBGA119 | |
K7P403623M-HC750 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | |
K7P403623M-HC75T | SAMSUNG |
获取价格 |
Application Specific SRAM, 128KX36, 7.5ns, CMOS, PBGA119 | |
K7P403666A-H25T | SAMSUNG |
获取价格 |
SRAM | |
K7P403666A-H27T | SAMSUNG |
获取价格 |
SRAM |