Datasheet > K7P403623M-H7500

K7P403623M-H7500

更新时间： 2024-11-11 20:00:11

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
12页	235K
描述
Standard SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119

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技术参数
数据手册

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K7P403623M-H7500 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	BGA,
针数：	119	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.92	Base Number Matches：	1

K7P403623M-H7500 数据手册

K7P403623M

K7P401823M

128Kx36 & 256Kx18 SRAM

Document Title

128Kx36 & 256Kx18 Synchronous Pipelined SRAM

Revision History

Rev.No.

History

DraftDate

Remark

Rev. 0.0

- Preliminary specification release

Preliminary

- Change specification format.

No change was made in parameters.

Rev. 0.1

Rev. 0.2

Preliminary

April, 1997

Jan. 1998

- Updated Part Number and Pin Description.

Updated and added Input/Output Voltage Level and VDDQ

Updated DC Characteristics and Pin Capacitance.

Updated AC Characteristics, Test Conditions and Timing Wave Form.

For JTAG, updated Vendor Definition and added tSVCH/tCHSX.

- Updated PECL Clock Input Level, Output Leakage Current

Updated 119BGA Package Thermal Characteristics

Rev. 0.3

Preliminary

Final

Aug. 1998

- Final specification release

Rev. 1.0

Rev. 2.0

Dec. 1998

Oct. 2000

- Single ended LVCMOS clock operation added

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.

Oct. 2000

- 1 -

Rev 2.0

12 3 4 5 6 7...12

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K7P403623M-HC650	SAMSUNG	获取价格	Standard SRAM, 128KX36, 6.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
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K7P403623M-HC750	SAMSUNG	获取价格	Standard SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
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