Datasheet > K7P801866B-HC250

K7P801866B-HC250

更新时间： 2024-11-12 05:44:27

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
13页	305K
描述
Late-Write SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119

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数据手册

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K7P801866B-HC250 数据手册

K7P803666B

K7P801866B

256Kx36 & 512Kx18 SRAM

Document Title

256Kx36 & 512Kx18 Synchronous Pipelined SRAM

Revision History

Rev. No.

History

Draft Date

Remark

Rev. 0.0

- Initial Document.

June. 2000

Advance

Rev. 0.1

Rev. 0.2

Rev. 0.3

- ZQ tolerance changed from 10% to 15%

Aug. 2000

Dec. 2000

Feb. 2001

Advance

Preliminary

- VDDQ changed to support wide range from 1.4V to 2.0V

- Functional Block diagram changed.

- Absolute Maximum ratings VDDQ changed from 3.13V to 2.825V

- Recommended DC Operating Conditions for VREF and VCM-CLK changed

from Min 0.6V to 0.68V, from Max 0.9V to 1.0V

Rev. 1.0

Rev. 2.0

Rev. 3.0

- Package thermal characteristics added.

May. 2001

Jan. 2002

Mar. 2002

Final

- Absolute Maximum Rating VDDQ changed from 2.825V to 2.4V

- Function Description modified

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters

of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.

March. 2002

- 1 -

Rev 3.0

12 3 4 5 6 7...13

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与K7P801866B-HC250相关器件

型号	品牌	获取价格	描述	数据表
K7P801866B-HC300	SAMSUNG	获取价格	Standard SRAM, 512KX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866M-H20	SAMSUNG	获取价格	Standard SRAM, 512KX18, 2.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866M-H2000	SAMSUNG	获取价格	Standard SRAM, 512KX18, 2.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866M-H21	SAMSUNG	获取价格	Standard SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866M-H2100	SAMSUNG	获取价格	Standard SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866M-H2500	SAMSUNG	获取价格	Standard SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866M-HC210	SAMSUNG	获取价格	Standard SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
K7P801866M-HC250	SAMSUNG	获取价格	Standard SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
K7P803611B	SAMSUNG	获取价格	256Kx36 & 512Kx18 Synchronous Pipelined SRAM
K7P803611B-HC25	SAMSUNG	获取价格	256Kx36 & 512Kx18 Synchronous Pipelined SRAM