K7P801811B-HC25

更新时间： 2024-11-11 11:27:43

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
13页	253K
描述
256Kx36 & 512Kx18 Synchronous Pipelined SRAM

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K7P801811B-HC25 数据手册

K7P803611B

K7P801811B

Preliminary

256Kx36 & 512Kx18 SRAM

Document Title

256Kx36 & 512Kx18 Synchronous Pipelined SRAM

Revision History

Rev.No.

History

Draft Date

Remark

Rev. 0.0

- Initial Document.

Feb. 2001

Preliminary

Rev. 1.0

Rev. 2.0

Rev. 3.0

Rev. 4.0

- Final specification release

May. 2001

Jan. 2002

Mar. 2002

Aug. 2002

Final

- Absolute Maximum Rating VDDQ changed from 2.825V to 2.4V.

- Function Description modified

- Add -HC27 part (Part Number, Idd, AC Characteristics)

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters

of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.

Aug. 2002

Rev 4.0

- 1 -

12 3 4 5 6 7...13

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型号	品牌	获取价格	描述	数据表
K7P801811B-HC250	SAMSUNG	获取价格	Standard SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801811B-HC27	SAMSUNG	获取价格	256Kx36 & 512Kx18 Synchronous Pipelined SRAM
K7P801811B-HC270	SAMSUNG	获取价格	Standard SRAM, 512KX18, 1.85ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801811B-HC30	SAMSUNG	获取价格	256Kx36 & 512Kx18 Synchronous Pipelined SRAM
K7P801811B-HC33	SAMSUNG	获取价格	256Kx36 & 512Kx18 Synchronous Pipelined SRAM
K7P801811B-HC330	SAMSUNG	获取价格	Standard SRAM, 512KX18, 1.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801811B-HC33T	SAMSUNG	获取价格	Late-Write SRAM, 512KX18, 1.5ns, CMOS, PBGA119
K7P801811M	SAMSUNG	获取价格	256Kx36 & 512Kx18 SRAM
K7P801811M-H20	SAMSUNG	获取价格	256Kx36 & 512Kx18 SRAM
K7P801811M-H2000	SAMSUNG	获取价格	Standard SRAM, 512KX18, 2.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119