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K7P801811M-HC25 PDF预览

K7P801811M-HC25

更新时间: 2024-11-11 14:43:03
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
13页 299K
描述
Standard SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119

K7P801811M-HC25 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:BGA,针数:119
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.78
最长访问时间:2 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PBGA-B119长度:22 mm
内存密度:9437184 bit内存集成电路类型:STANDARD SRAM
内存宽度:18功能数量:1
端子数量:119字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX18封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
认证状态:Not Qualified最大供电电压 (Vsup):3.45 V
最小供电电压 (Vsup):3.15 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
宽度:14 mmBase Number Matches:1

K7P801811M-HC25 数据手册

 浏览型号K7P801811M-HC25的Datasheet PDF文件第2页浏览型号K7P801811M-HC25的Datasheet PDF文件第3页浏览型号K7P801811M-HC25的Datasheet PDF文件第4页浏览型号K7P801811M-HC25的Datasheet PDF文件第5页浏览型号K7P801811M-HC25的Datasheet PDF文件第6页浏览型号K7P801811M-HC25的Datasheet PDF文件第7页 
K7P803611M  
K7P801811M  
256Kx36 & 512Kx18 SRAM  
Document Title  
256Kx36 & 512Kx18 Synchronous Pipelined SRAM  
Revision History  
Draft Date  
Remark  
Rev. No.  
History  
Mar. 1999  
Preliminary  
Rev. 0.0  
- Preliminary specification release  
Nov. 1999  
Mar. 2002  
Final  
Final  
Rev. 1.0  
Rev. 2.0  
- Final specification release  
- Function Description modified  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
March 2002  
1
Rev. 2.0  

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256Kx36 AND 512Kx18 Synchronous Pipelined SRAM
K7P801866B-HC250 SAMSUNG

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Late-Write SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866B-HC300 SAMSUNG

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Standard SRAM, 512KX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866M-H20 SAMSUNG

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Standard SRAM, 512KX18, 2.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866M-H2000 SAMSUNG

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Standard SRAM, 512KX18, 2.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866M-H21 SAMSUNG

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Standard SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866M-H2100 SAMSUNG

获取价格

Standard SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866M-H2500 SAMSUNG

获取价格

Standard SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
K7P801866M-HC210 SAMSUNG

获取价格

Standard SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119