生命周期: | Active | 包装说明: | BGA, |
Reach Compliance Code: | compliant | HTS代码: | 8542.32.00.41 |
风险等级: | 5.8 | 最长访问时间: | 2 ns |
其他特性: | PIPELINED ARCHITECTURE, SEATED HT-CALCULATED | JESD-30 代码: | R-PBGA-B119 |
长度: | 22 mm | 内存密度: | 4718592 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 36 |
功能数量: | 1 | 端子数量: | 119 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 128KX36 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 座面最大高度: | 2.2 mm |
最大供电电压 (Vsup): | 3.45 V | 最小供电电压 (Vsup): | 3.15 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子节距: | 1.27 mm |
端子位置: | BOTTOM | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K7P403611A-H27 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX36, 1.9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 | |
K7P403611A-H2700 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX36, 1.9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 | |
K7P403611A-H30 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX36, 1.8ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 | |
K7P403611A-HC27T | SAMSUNG |
获取价格 |
Late-Write SRAM, 128KX36, 1.9ns, CMOS, PBGA119 | |
K7P403611A-HC300 | SAMSUNG |
获取价格 |
Late-Write SRAM, 128KX36, 1.8ns, CMOS, PBGA119 | |
K7P403611A-HC30T | SAMSUNG |
获取价格 |
Late-Write SRAM, 128KX36, 1.8ns, CMOS, PBGA119 | |
K7P403622B | SAMSUNG |
获取价格 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM | |
K7P403622B-HC16 | SAMSUNG |
获取价格 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM | |
K7P403622B-HC160 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX36, 3ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 | |
K7P403622B-HC20 | SAMSUNG |
获取价格 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM |